2N7002XFB document number: ds35449 rev. 2 - 6 1 of 5 www.diodes.com september 2011 ? diodes incorporated 2N7002XFB new product obsolete n-channel enhancement mode field mosfet product summary v (br)dss r ds(on) i d t a = 25c 60v 3.0? @ v gs = 10v 400ma 4.0? @ v gs = 5v 330ma description and applications these n-channel enhancement mode fi eld effect transistors are produced using diodes proprietary , high density, uses advanced trench technology.these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.these products are particularly suited for low voltage, low current applications such as small ? load switching . features and benefits ? n-channel mosfet ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? small surface mount package ? esd protected gate, 1.2kv hbm ? lead, halogen and antimony free, rohs compliant ? "green" device (notes 1 and 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau ov er copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 3) part number case packaging 2N7002XFB-7 dfn1006-3 3000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. 2. product manufactured with data code v9 (week 33, 2008) and newer are built with green molding compound. product manufactu red prior to date code v9 are built with non-green molding compound and may contain halogens or sb203 fire retardants. 3. for packaging details, go to our website at http://www.diodes.com marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d dfn1006-3 top view e q uivalent circuit to p view
2N7002XFB document number: ds35449 rev. 2 - 6 2 of 5 www.diodes.com september 2011 ? diodes incorporated 2N7002XFB new product obsolete maximum ratings characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 10v steady state t a = 25c t a = 70c i d 260 210 ma continuous drain current (note 5) v gs = 10v steady state t a = 25c t a = 70c i d 400 310 ma thermal characteristics characteristic symbol value units power dissipation, @t a = 25c (note 4) p d 430 mw thermal resistance, junction to ambient @t a = 25c (note 4) r ja 290 c/w power dissipation, @t a = 25c (note 5) p d 840 mw thermal resistance, junction to ambient @t a = 25c (note 5) r jsa 147 c/w operating and storage temperature range t j , t stg -55 to +150 c . electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 60 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 0.1 a v ds = 60v, v gs = 0v gate-body leakage i gss - - 10 a v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 1.2 - 2.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 2.1 2.3 3.0 4.0 v gs = 10v, i d = 0.115a v gs =5v, i d = 0.1115a forward transfer admittance |y fs | 80 320 - ms v ds = 10v, i d = 0.115a diode forward voltage v sd - 0.7 1.0 v v gs = 0v, i s = 0.115a dynamic characteristics (note 7) input capacitance c iss - 25 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 4,7 - pf reverse transfer capacitance c rss - 2.5 - pf turn-on delay time t d ( on ) - 3.27 - ns v dd = 30v, v gen = 10v, r gen = 25 ? ,i d = 0.115a turn-on rise time t r - 3.15 - ns turn-off delay time t d ( off ) - 12.025 - ns turn-off fall time t f - 6.29 - ns notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 5. device mounted on 2? x 2? fr-4 pcb wi th high coverage 2 oz. copper, single sided . 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
2N7002XFB document number: ds35449 rev. 2 - 6 3 of 5 www.diodes.com september 2011 ? diodes incorporated 2N7002XFB new product obsolete 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain-source voltage (v) ds fig.1 typical output characteristics v =2.5v gs v =3.0v gs v =3.5v gs v =4.0v gs v =4.5v gs v =5.0v gs v =10v gs 0.01 0.1 1 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage gs fig. 2 typical transfer characteristics v= 5.0v ds t=-55c a t=25c a t=85c a t =125 c a t =150 c a i , drain current (a) d 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.1 0.2 0.3 0.4 0.5 0.6 i , drain-source current (a) fig. 3 typical on-resistance vs. drain current and gate charge d v=5v gs v =10v gs r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 tj, junction temperature ( c) fig. 4 on-resistance variation with temperature v =10v, i =115ma gs d v=5v, i =115ma gs d r , drain-source on-resistance (normalized) ds(on) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 tj, junction temperature (c) fig. 5 gate threshold variation vs. ambient temperature i =250a d i=1ma d v, g at e th r esh o ld v o lta g e (v) gs(th) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 v , drain-source voltage fig. 6 typical junction capacitance ds f=1mhz c iss c oss c rss c , j u n c t i o n c a p a c i t an c e ( p f ) t
2N7002XFB document number: ds35449 rev. 2 - 6 4 of 5 www.diodes.com september 2011 ? diodes incorporated 2N7002XFB new product obsolete 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) fig. 7 diode forward voltage vs. current sd t =125c a t =-55c a t =25c a t =150c a t =85c a i , source current (a) s package outline dimensions suggested pad layout dfn1006 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
2N7002XFB document number: ds35449 rev. 2 - 6 5 of 5 www.diodes.com september 2011 ? diodes incorporated 2N7002XFB new product obsolete important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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